人工晶体学报2024，Vol.53Issue(4)：585-599,15.
碳化硅化学机械抛光中材料去除非均匀性研究进展
Research Progress on Material Removal Non-Uniformity in Silicon Carbide Chemical Mechanical Polishing
摘要
Abstract
Chemical mechanical polishing(CMP)has become a critical process step in semiconductor manufacturing.This technique is a commonly used and effective method for achieving ultra-precision processing of silicon carbide wafers,playing a key role in the fabrication of semiconductor devices.CMP is employed to process the wafer surface,resulting in high material removal rates,excellent surface quality,and superior surface planarity of the chips.However,in the CMP of silicon carbide(SiC)wafers,the non-uniformity of material removal on the chip surface has been a challenging issue.Reducing the non-uniformity of material removal is essential for ensuring the high performance and stability of semiconductor devices.This article introduces the properties and applications of silicon carbide,along with the CMP process.It investigates the material removal mechanisms of different CMP techniques for silicon carbide,explores the development status of various CMP technologies,and evaluates the performance and pros and cons of different CMP techniques.The article provides an overview of the factors influencing material removal non-uniformity in CMP of silicon carbide wafers,including factors such as polishing pressure,polishing slurry(abrasives),and rotation speed.Finally,the article provides prospects for future research on material removal non-uniformity in silicon carbide CMP.关键词
碳化硅/化学机械抛光/材料去除/抛光压力/抛光液/抛光垫Key words
silicon carbide/chemical mechanical polishing/material removal/polishing pressure/polishing slurry/polishing pad分类
金属材料引用本文复制引用
孙兴汉,李纪虎,张伟,曾群锋,张俊锋..碳化硅化学机械抛光中材料去除非均匀性研究进展[J].人工晶体学报,2024,53(4):585-599,15.基金项目
陕西省自然科学基金(2022JM-251) （2022JM-251）
