三元PbBi2S4凝固生长与热电性能研究OA
Research on the Solid-State Growth and Thermoelectric Properties of Ternary PbBi2S4 Compound
三元PbBi2S4 是一种具有本征低晶格热导率的潜力热电材料,但低的电传输性能制约了其热电性能.本工作利用 Bridgman 法制备了高质量的三元 PbBi2S4 晶体铸锭,由于减少晶界密度,降低晶界对载流子传输阻碍,电传输性能大幅度提升.通过优化生长条件获得不同质量的三元 PbBi2S4 晶体铸锭,最优加权载流子迁移率从多晶中 15 cm2/(V·s)提升到 56 cm2/(V·s),使三元 PbBi2S4 晶体铸锭的最大电导率和功率因子分别达到 1 049 S/cm和 4.6 μW/(cm·K2),相比多晶PbBi2S4 样品分别提高了 850%和～64%.最终,PbBi2S4 晶体铸锭的最大ZT值在 773 K温度下达到 0.61.结果表明,通过凝固生长高质量晶体铸锭能显著优化三元PbBi2S4 化合物全温区热电性能.
Ternary PbBi2S4 is a potential thermoelectric material with intrinsically low lattice thermal conductivity,but the low electrical transport properties limit its thermoelectric properties.In this work,high-quality ternary PbBi2S4 crystal ingots were prepared by the Bridgman method.By reducing the grain boundary density to reduce the carrier transport barrier,the electrical transport properties greatly improved.By optimizing the growth conditions,ternary PbBi2S4 crystal ingots of different qualities were obtained.The optimal weighted mobility increases from 15 cm2/(V·s)in the polycrystal to 56 cm2/(V·s),and the maximum electrical conductivity and power factor of the ternary PbBi2S4 crystal ingot reach 1 049 S/cm and 4.6 μW/(cm·K2),respectively.Compared with those of the polycrystalline PbBi2S4 sample,the increases are 850%and～64%,respectively.Finally,the maximum ZT value in the PbBi2S4 crystal ingot reaches 0.61 at 773 K.The results show that the solidification growth of high-quality crystal ingots can significantly optimize the full-temperature thermoelectric properties of the ternary PbBi2S4 compound.
刘伟;陈彪;肖钰
电子科技大学材料与能源学院,四川成都 611731||西安交通大学金属材料强度国家重点实验室,陕西西安 710049西北工业大学凝固技术国家重点实验室,陕西西安 710072电子科技大学材料与能源学院,四川成都 611731
PbBi2S4 晶体铸锭晶界迁移率功率因子ZT值
PbBi2S4 crystal ingotsgrain boundarymobilitypower factorZT values
《铸造技术》 2024 (004)
328-334 / 7
国家自然科学基金(52172236);凝固技术国家重点实验室基金(SKLSP202314);电子科技大学"百人"项目
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