首页|期刊导航|Journal of Semiconductors|Metal-modulated epitaxy of Mg-doped Al_(0.80)In_(0.20)N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Metal-modulated epitaxy of Mg-doped Al_(0.80)In_(0.20)N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Horacio Irán Solís-Cisneros Carlos Alberto Hernández-Gutiérrez Enrique Campos-González Máximo López-López

Journal of Semiconductors2024，Vol.45Issue(5)：P.80-89,10.

Journal of Semiconductors2024，Vol.45Issue(5)：P.80-89,10.DOI:10.1088/1674-4926/45/5/052501

Metal-modulated epitaxy of Mg-doped Al_(0.80)In_(0.20)N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Horacio Irán Solís-Cisneros ¹Carlos Alberto Hernández-Gutiérrez ¹Enrique Campos-González ²Máximo López-López³

作者信息

1. Optomechatronics Group,Tecnológico Nacional de México Campus Tuxtla Gutiérrez,carretera Panamericana 1080,C.P.29050,Tuxtla Gutiérrez,Chiapas,México
2. Departamento de Física,Instituto Nacional de Investigaciones Nucleares,Carretera México-Toluca s/n,C.P.52750,La Marquesa Ocoyoacac,México
3. Departamento de Física,Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional,Av.Instituto Politécnico Nacional 2508,San Pedro Zacatenco,Gustavo A.Madero,07360 Ciudad de México,CDMX,México
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摘要

关键词

metal-modulated epitaxy/AlInN/DUV-LED/EBL/simulation

分类

信息技术与安全科学

引用本文复制引用

Horacio Irán Solís-Cisneros,Carlos Alberto Hernández-Gutiérrez,Enrique Campos-González,Máximo López-López..Metal-modulated epitaxy of Mg-doped Al_(0.80)In_(0.20)N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes[J].Journal of Semiconductors,2024,45(5):P.80-89,10.

基金项目

supported by the TECNM/ITTG project:18685.23-P. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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