电子与封装2024，Vol.24Issue(5)：85-88,4.DOI:10.16257/j.cnki.1681-1070.2024.0070
N多晶电阻的温度漂移影响因子及工艺研究
N Polycrystalline Resistor Temperature Drift Influence Factor and Process Research
陈培仓 1周凌霄 1洪成强 1王涛 1吴建伟1
作者信息
- 1. 无锡中微晶园电子有限公司,江苏无锡 214035
- 折叠
摘要
Abstract
Polycrystalline resistors are widely used in integrated circuits as circuit loads,damping,voltage-sharing or current-sharing.However,the resistance value of polycrystalline doped resistors is determined by the carrier concentration and mobility in practice,and both of them are affected by the temperature,so the resistance value of polycrystalline resistors varies with the change of temperature,and there is a certain temperature coefficient.The temperature drift influence factor of N polycrystalline resistor is investigated and verified by group experiments.Low-temperature-drift and high-precision semiconductor N polycrystalline resistors with a temperature coefficient within±10×10-6/℃ are prepared,which ensure the stability of circuits under different temperature environments,and provide a reference for the design of high-stability circuits.关键词
多晶电阻/掺杂/温度漂移Key words
polycrystalline resistor/doping/temperature drift分类
信息技术与安全科学引用本文复制引用
陈培仓,周凌霄,洪成强,王涛,吴建伟..N多晶电阻的温度漂移影响因子及工艺研究[J].电子与封装,2024,24(5):85-88,4.
