电子与封装2024，Vol.24Issue(6)：36-43,8.DOI:10.16257/j.cnki.1681-1070.2024.0109
TSV电镀过程中Cu生长机理的数值模拟研究进展
Progress of Numerical Simulation of Cu Growth Mechanism During Electroplating of TSV
摘要
Abstract
In recent years,the rapid development of the electronic information industry has driven the advancement of packaging technology,and put forward higher requirements for miniaturized,thin and light,high performance and multi-functional electronic devices.The through silicon via(TSV)technology is an important advanced packaging technology,in which copper electrodeposition is one of the key steps.The mechanism and numerical simulation progress of Cu growth in TSV during electroplating are reviewed.The deep-hole nature of TSV leads to uneven current density distribution during Cu growth,resulting in different growth modes.Organic additives play a key role in regulating the current density and preventing defect filling.With the development of computer technology,numerical simulation becomes an important tool to study TSV Cu electroplating,which can reduce the experimental cost and optimize the process parameters.The development of numerical simulation for TSV Cu electroplating is prospected,and the integrated simulation of coupled influencing factors is emphasized as the focus of future research.关键词
三维封装/TSV/电镀铜/数值模拟Key words
three-dimensional packaging/through silicon via/Cu electroplating/numerical simulation分类
信息技术与安全科学引用本文复制引用
许增光,李哲,钟诚,刘志权..TSV电镀过程中Cu生长机理的数值模拟研究进展[J].电子与封装,2024,24(6):36-43,8.基金项目
国家自然科学基金青年基金(62304143) （62304143）
广东省重点领域研发计划(2023B0101040002) （2023B0101040002）
