电子与封装2024，Vol.24Issue(6)：83-96,14.DOI:10.16257/j.cnki.1681-1070.2024.0136
硅通孔三维互连与集成技术
Three Dimensional TSV Interconnection and Integration Technology
马书英 1付东之 1刘轶 1仲晓羽 1赵艳娇 1陈富军 1段光雄 1边智芸1
作者信息
- 1. 华天科技(昆山)电子有限公司,江苏苏州 215300
- 折叠
摘要
Abstract
With the rapid advancement of electronic technology,the semiconductor manufacturing industry is faced with new challenges in meeting the packaging demands for higher density,more miniaturization,higher integration,and higher performance.The functional density of chip has reached the limit of two-dimensional packaging technology due to physical constraints.Reducing line width alone cannot satisfy the requirements for high performance,low power consumption,and high signal transmission speed.Developing advanced node technology poses difficulties in terms of time and cost control as it takes a considerable amount of time for the technology to mature.Moore's Law has become unsustainable.To continue and surpass Moore's Law,chip stereo-stacked three-dimensional through silicon via(TSV)technology nowadays has become the focus of attention.TSV structures and fabrication processes are reviewed,and typical TSV application technologies in the industry are analyzed and summarized.关键词
硅通孔/三维互连/集成技术/先进封装Key words
TSV/3D interconnection/integrated technology/advanced package分类
信息技术与安全科学引用本文复制引用
马书英,付东之,刘轶,仲晓羽,赵艳娇,陈富军,段光雄,边智芸..硅通孔三维互连与集成技术[J].电子与封装,2024,24(6):83-96,14.
