大尺寸AlN活性金属焊接覆铜基板的界面结合机理OA北大核心CSTPCD

Based on the 190 mmx139 mmx0.635 mm large-size AlN active metal brazing(AMB)substrate technological process,the microstructures and phase compositions of the brazed interface were investigated to clarify the interface bonding mechanism,which provide a guide for preparing large size,low porosity,and high peeling strength AlN-AMB substrate.The results show that during brazing large-size AlN-AMB substrate,Ag-Cu alloy in the Ag-Cu-Ti alloy solder is bonded to the Cu foil to form an intensive metallurgical bonding interface via atomic interdiffusion.Meanwhile,the active Ti atoms in the solder diffuse to the AlN substrate surface,and react with AlN to form a 0.5-1 μm TiN reaction layer to finally construct a strong bonding reaction interface.Moreover,the solder melt do not fill the AlN grain boundaries and pits on the surface of the AlN substrate,and the Ti atoms do not react with the Y-Al-O secondary phase particles.It results in the formation of the discontinuous TiN reaction layer and pores.As a result,the interface bonding strength and reliability are decreased for the large size AlN-AMB substrate.