电子与封装2024，Vol.24Issue(6)：129-138,10.DOI:10.16257/j.cnki.1681-1070.2024.0138
基于TSV的三维集成系统电热耦合仿真设计
Electro-Thermal Coupling Simulation Design of 3D Integrated System Based on TSV
王九如 1朱智源1
作者信息
- 1. 西南大学电子信息工程学院,重庆 400700
- 折叠
摘要
Abstract
Three-dimensional integrated system utilizes vertical stacking technology to achieve high performance and low power consumption,in which through-silicon via(TSV)technology is key to the successful implementation of three-dimensional interconnects.TSV technology shortens the interconnect distance and enhances signal transmission efficiency and electromagnetic compatibility,but it also leads to electro-thermal coupling issues,threatening further performance improvement of three-dimensional integrated circuits.Advances in the simulation design of electro-thermal coupling phenomena in three-dimensional integrated circuits based on TSV are summarized,the electrical and thermal simulation design methods are described in detail,and the potential impacts and mitigation strategies for electro-thermal coupling issues are explored.A systematic analysis is provided to understand and address the challenges of electro-thermal coupling in three-dimensional integrated systems,and guidance is provided for future research directions.关键词
三维集成系统/硅通孔/电热耦合Key words
three-dimensional integrated system/through-silicon via/electro-thermal coupling分类
信息技术与安全科学引用本文复制引用
王九如,朱智源..基于TSV的三维集成系统电热耦合仿真设计[J].电子与封装,2024,24(6):129-138,10.
