|国家科技期刊平台
首页|期刊导航|电子元件与材料|一种低温漂低功耗的带隙基准电压源设计

一种低温漂低功耗的带隙基准电压源设计OA北大核心CSTPCD

Design of a bandgap reference voltage source with low temperature drift power

中文摘要英文摘要

为了提高DC-DC转换器的性能,提出了一种电压带隙基准.通过调节参数抵消掉两路电流的一阶温度项,得到了只具有常数项和高阶温度项的电流,从而在输出电阻上转化为电压补偿三极管的高阶温度项,进而使得带隙具有较低的温度系数.之后在输出端加上RC滤波器,使得高频段的电源抑制比得到提升.同时为了探索带隙在低功耗下的工作特性,几乎将所有MOS管置于亚阈值区,达到降低静态电流的效果.基于TSMC 0.18 μm CMOS 工艺完成了电路的设计与仿真,结果表明,在1.8 V的电源电压下,带隙输出为1.256 V;在-40~140℃的变化范围内,温度系数为6.3×10-6 ℃-1;通过增加RC滤波器,高频电源抑制比为-65dB@10MHz;而且整个带隙的静态电流仅有6.2 μA.

To enhance the performance of DC-DC converters,a voltage bandgap reference was proposed.The first-order temperature dependence of the current in two sides were offset by adjusting parameters,resulting in current with only a constant term and high-order temperature dependent terms.As a result,the output resistance is compensated by the high-order temperature dependent terms of the transistor,which yields a lower temperature coefficient of the bandgap.An RC filter was added at the output to enhance the power supply rejection ratio in the high-frequency range.Additionally,almost all MOS transistors were placed in the subthreshold region to explore the characteristics of the bandgap at low power consumption and achieve a reduction in static current.The circuit design and simulation were completed based on the TSMC 0.18 μm CMOS process.The results show that the bandgap output is 1.256 V at a supply voltage of 1.8 V.From-40 ℃ to 140 ℃,the temperature coefficient is 6.3x 10-6℃-1.By adding an RC filter,the power supply rejection ratio is-65 dB@10 MHz at high frequency.Moreover,the static current of the entire bandgap is only 6.2 μA.

张涛;刘逸冬;刘劲

武汉科技大学信息科学与工程学院,湖北武汉 430081

电子信息工程

带隙基准温度补偿亚阈值温度系数

bandgap referencetemperature compensationsubthresholdtemperature coefficient

《电子元件与材料》 2024 (005)

617-624 / 8

国家自然科学基金(61873196)

10.14106/j.cnki.1001-2028.2024.1510

评论