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一种低温漂低功耗的带隙基准电压源设计

张涛 刘逸冬 刘劲

电子元件与材料2024,Vol.43Issue(5):617-624,8.
电子元件与材料2024,Vol.43Issue(5):617-624,8.DOI:10.14106/j.cnki.1001-2028.2024.1510

一种低温漂低功耗的带隙基准电压源设计

Design of a bandgap reference voltage source with low temperature drift power

张涛 1刘逸冬 1刘劲1

作者信息

  • 1. 武汉科技大学信息科学与工程学院,湖北武汉 430081
  • 折叠

摘要

Abstract

To enhance the performance of DC-DC converters,a voltage bandgap reference was proposed.The first-order temperature dependence of the current in two sides were offset by adjusting parameters,resulting in current with only a constant term and high-order temperature dependent terms.As a result,the output resistance is compensated by the high-order temperature dependent terms of the transistor,which yields a lower temperature coefficient of the bandgap.An RC filter was added at the output to enhance the power supply rejection ratio in the high-frequency range.Additionally,almost all MOS transistors were placed in the subthreshold region to explore the characteristics of the bandgap at low power consumption and achieve a reduction in static current.The circuit design and simulation were completed based on the TSMC 0.18 μm CMOS process.The results show that the bandgap output is 1.256 V at a supply voltage of 1.8 V.From-40 ℃ to 140 ℃,the temperature coefficient is 6.3x 10-6℃-1.By adding an RC filter,the power supply rejection ratio is-65 dB@10 MHz at high frequency.Moreover,the static current of the entire bandgap is only 6.2 μA.

关键词

带隙基准/温度补偿/亚阈值/温度系数

Key words

bandgap reference/temperature compensation/subthreshold/temperature coefficient

分类

信息技术与安全科学

引用本文复制引用

张涛,刘逸冬,刘劲..一种低温漂低功耗的带隙基准电压源设计[J].电子元件与材料,2024,43(5):617-624,8.

基金项目

国家自然科学基金(61873196) (61873196)

电子元件与材料

OA北大核心CSTPCD

1001-2028

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