电子与封装2024，Vol.24Issue(6)：20-35,16.DOI:10.16257/j.cnki.1681-1070.2024.0104
硅通孔3D互连热-力可靠性的研究与展望
Research and Prospect on Thermal-Mechanical Reliability of Through Silicon Via 3D Interconnection
摘要
Abstract
Through silicon via(TSV)technology is a key technology used in 3D integrated packaging to achieve high-density and high-performance interconnection,the thermal-mechanical reliability of TSV has a direct impact on the performance and lifetime of 3D integrated packaging.The thermal-mechanical reliability of TSV 3D interconnection is investigated from the aspects of TSV fabrication process,structural layout,material reliability and evaluation method,and the research methods and current research status are summarized and elaborated.In addition,in response to the development trend of reducing the size of TSV to the nanoscale,the reliability challenges faced by nanoscale TSV in the application of advanced chip backside power supply and higher density chip integration are discussed.关键词
封装技术/硅通孔/3D互连/热-力可靠性Key words
packaging technology/through silicon via/3D interconnection/thermal-mechanical reliability分类
信息技术与安全科学引用本文复制引用
吴鲁超,陆宇青,王珺..硅通孔3D互连热-力可靠性的研究与展望[J].电子与封装,2024,24(6):20-35,16.基金项目
国家自然科学基金(61774044) （61774044）
教育部创新平台专项经费资助 （）
