人工晶体学报2024，Vol.53Issue(6)：913-921,9.
金刚石基GaN界面热阻控制研究进展
Research Progress on Controlling the Thermal Boundary Resistance of GaN on Diamond
兰飞飞 1刘莎莎 1房诗舒 1王英民 1程红娟1
作者信息
- 1. 中国电子科技集团公司第四十六研究所,天津 300220
- 折叠
摘要
Abstract
GaN high electron mobility transistor(HEMT)played major roles in radar,5G communication,aerospace and other fields.With increasingly higher output powers developed,however,heat dissipation has become a severely problem limiting the device performance and deteriorating the device reliability and life span.Diamond has the highest thermal conductivity(＞2 000 W·m-1·K-1)of the bulk material.Integration diamond film with GaN HEMT can rapidly extract heat from the junction,which may increase the power density.In this paper,the technical advantages and realization approaches of GaN on diamond are stated,and the effect of the thermal boundary resistance on heat dissipation is discussed.The latest researches on the reducing of the thermal boundary resistance are thoroughly reviewed,the difficulties and development in controlling the thermal boundary resistance are also analyzed.It is clarified that under the condition of limited selection of dielectric layer materials,the thermal boundary resistance can be reduced through the enhancing of the quality of the interface between GaN and diamond.关键词
氮化镓/金刚石基GaN/界面热阻/介质层/功率密度/HEMTKey words
GaN/GaN on diamond/thermal boundary resistance/dielectric layer/power density/HEMT分类
数理科学引用本文复制引用
兰飞飞,刘莎莎,房诗舒,王英民,程红娟..金刚石基GaN界面热阻控制研究进展[J].人工晶体学报,2024,53(6):913-921,9.
