华中科技大学学报（自然科学版）2024，Vol.52Issue(7)：87-91,5.DOI:10.13245/j.hust.240739
新型多级沟槽结势垒肖特基二极管
New type multi-step trench junction barrier Schottky diode
摘要
Abstract
A novel multi-step trench junction barrier Schottky(MTJBS)diode was proposed and its performance was studied via numerical simulation with Silvaco TCAD.The simulation results show that with the same structural parameters,the peak electric field at the Schottky contact of the conventional JBS is 50.0%higher than that of the MTJBS when the reverse bias(VR)is equal to 1 200 V.When the peak electric field at the surface of the device is equal to 1 MV/cm at VR is 1 200 V,the width of the Schottky contact of the JBS is 1.6 μm while that of the MTJBS is 3.0 μm.Based on the simulation results,the JBS and MTJBS are manufactured using the same structural parameters and subsequently tested.The forward conduction characteristic of the MTJBS does not show greatly degradation while the breakdown voltage is increased by about 200 V.At the same time,the reverse leakage current is reduced by about two orders of magnitude.关键词
碳化硅/结势垒肖特基二极管/多级沟槽/漏电流/高温特性/工艺流程Key words
silicon carbide/junction barrier Schottky diode/multi-step trench/leakage current/high temperature characteristics/process flow分类
信息技术与安全科学引用本文复制引用
袁俊,陈伟,郭飞,成志杰,王宽,吴阳阳,辛国庆,王智强..新型多级沟槽结势垒肖特基二极管[J].华中科技大学学报（自然科学版）,2024,52(7):87-91,5.基金项目
2023年湖北省重大攻关项目(2023BAA009). （2023BAA009）
