新型多级沟槽结势垒肖特基二极管OA北大核心CSTPCD

A novel multi-step trench junction barrier Schottky(MTJBS)diode was proposed and its performance was studied via numerical simulation with Silvaco TCAD.The simulation results show that with the same structural parameters,the peak electric field at the Schottky contact of the conventional JBS is 50.0%higher than that of the MTJBS when the reverse bias(VR)is equal to 1 200 V.When the peak electric field at the surface of the device is equal to 1 MV/cm at VR is 1 200 V,the width of the Schottky contact of the JBS is 1.6 μm while that of the MTJBS is 3.0 μm.Based on the simulation results,the JBS and MTJBS are manufactured using the same structural parameters and subsequently tested.The forward conduction characteristic of the MTJBS does not show greatly degradation while the breakdown voltage is increased by about 200 V.At the same time,the reverse leakage current is reduced by about two orders of magnitude.