首页|期刊导航|半导体学报（英文版）|Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Yuting Chen Di Geng Guilei Wang Chao Zhao Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang

半导体学报（英文版）2024，Vol.45Issue(7)：39-44,6.

半导体学报（英文版）2024，Vol.45Issue(7)：39-44,6.DOI:10.1088/1674-4926/24010032

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Yuting Chen ¹Di Geng ²Guilei Wang ¹Chao Zhao ¹Xinlv Duan ²Xueli Ma ¹Peng Yuan ¹Zhengying Jiao ¹Yongqing Shen ¹Liguo Chai ¹Qingjie Luan ¹Jinjuan Xiang¹

作者信息

1. Beijing Superstring Academy of Memory Technology,Beijing 100176,China
2. State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing100029,China
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摘要

关键词

In-Ga-Zn-O (IGZO)/thermal atomic layer deposition/vertical channel/thin-film transistor

Key words

In-Ga-Zn-O (IGZO)/thermal atomic layer deposition/vertical channel/thin-film transistor

引用本文复制引用

Yuting Chen,Di Geng,Guilei Wang,Chao Zhao,Xinlv Duan,Xueli Ma,Peng Yuan,Zhengying Jiao,Yongqing Shen,Liguo Chai,Qingjie Luan,Jinjuan Xiang..Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel[J].半导体学报（英文版）,2024,45(7):39-44,6.

基金项目

This work was funded in part by the National Key R&D Program of China(Grant No.2022YFB3606900),and in part by the National Natural Science of China(Grant No.62004217). （Grant No.2022YFB3606900）

半导体学报（英文版）

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ISSN：1674-4926

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