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V频段宽带高效率功率合成放大器设计

胡顺勇

电讯技术2024,Vol.64Issue(7):1156-1162,7.
电讯技术2024,Vol.64Issue(7):1156-1162,7.DOI:10.20079/j.issn.1001-893x.240112006

V频段宽带高效率功率合成放大器设计

Design of a V-band High Efficiency Power-combining Amplifier

胡顺勇1

作者信息

  • 1. 中国西南电子技术研究所,成都 610036
  • 折叠

摘要

Abstract

A V-band broadband high efficiency power-combining amplifier based on waveguide hybrid magic T is introduced.A novel miniaturized high isolation two-way power divider covering the entire V-band is designed using the waveguide hybrid magic T structure and an ultra-wideband fan-shaped open circuit thin film resistor.In 50~75 GHz,the measured average insertion loss is 0.2 dB,the input return loss is less than-20 dB,and the isolation and output return loss are less than-14 dB.Based on this circuit structure,a 3.5 W power module is developed using a V-band broadband GaN power amplifier chip.A V-band broadband high efficiency power-combining amplifier is developed using this power module as the basic unit and the 16-way high-efficiency power dividing/combining network.The test results show that in the full frequency range of the V-band,the continuous wave saturated output power is more than 47 dBm,the small signal gain is more than 46 dB,and the power-combining is more than 82%,high combining efficiency and large output power is achieved in the whole V-band.The circuit has a compact structure,wide operating frequency band,high power combining efficiency,and is easy to dissipate heat,making it highly valuable for engineering applications.

关键词

功率合成放大器/V频段/混合魔T结构

Key words

power-combining amplifier/V-band/hybrid magic T structure

分类

信息技术与安全科学

引用本文复制引用

胡顺勇..V频段宽带高效率功率合成放大器设计[J].电讯技术,2024,64(7):1156-1162,7.

电讯技术

OA北大核心CSTPCD

1001-893X

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