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内嵌Flash存储器可靠性评估方法的分析及应用

周焕富 刘伟 周成

电子与封装2024,Vol.24Issue(7):43-49,7.
电子与封装2024,Vol.24Issue(7):43-49,7.DOI:10.16257/j.cnki.1681-1070.2024.0083

内嵌Flash存储器可靠性评估方法的分析及应用

Analysis and Application of Reliability Evaluation Method for Embedded Flash Memory

周焕富 1刘伟 1周成1

作者信息

  • 1. 中科芯集成电路有限公司,江苏无锡 214072
  • 折叠

摘要

Abstract

Classification of memory and the basic structure of Flash memory are introduced,and the characteristics of the reliability test standard of non-volatile memory(NVM)are analyzed.The standards and methods of NVM reliability test published by JEDEC and AEC are compared in terms of test items,test conditions,sample quantity and data graphs.Based on the test standards and methods published by JEDEC and AEC,two MCU chips with memory capacities of 64 kB and 128 kB are used as test objects to design an evaluation test for the reliability of embedded Flash memory in MCU chips,providing a reference for the design and verification of Flash memory.

关键词

Flash存储器/擦写循环/数据保持

Key words

Flash memory/erase cycle/data retention

分类

信息技术与安全科学

引用本文复制引用

周焕富,刘伟,周成..内嵌Flash存储器可靠性评估方法的分析及应用[J].电子与封装,2024,24(7):43-49,7.

电子与封装

1681-1070

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