电子与封装2024，Vol.24Issue(7)：57-62,6.DOI:10.16257/j.cnki.1681-1070.2024.0067
一种基于汉明码纠错的高可靠存储系统设计
Design of a High-Reliability Storage System Based on Hamming Code Error Correction
史兴强 1刘梦影 1王芬芬 1陆皆晟 1陈红1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
In order to enhance the reliability of on-chip storage,a high-reliability storage system based on Hamming code error correction is designed.This circuit is composed of an error detection and correction(ECC)register module and an ECC_CTRL module.The CPU can configure ECC registers through the advanced high-performance bus(AHB)to implement corresponding functions.The read and write data of SRAM and Flash is processed through the ECC_CTRL module for check code generation and data error detection and correction.Simulation results demonstrate that this high-reliability storage system can detect single-bit and double-bit errors,and correct single-bit errors,thereby improving the reliability of data storage.At the same time,this circuit can lock erroneous data and addresses into registers,preventing users from accessing erroneous addresses.关键词
汉明码/高可靠性/存储系统/检错纠错Key words
Hamming code/high-reliability/storage system/error detection and correction分类
信息技术与安全科学引用本文复制引用
史兴强,刘梦影,王芬芬,陆皆晟,陈红..一种基于汉明码纠错的高可靠存储系统设计[J].电子与封装,2024,24(7):57-62,6.
