电子与封装2024，Vol.24Issue(7)：75-79,5.DOI:10.16257/j.cnki.1681-1070.2024.0081
内嵌NPN结构的高维持电压可控硅器件
High Holding Voltage Silicon-Controlled Rectifier Device with Embedded NPN Structure
摘要
Abstract
To address the problems of high trigger voltage,low holding voltage and high latch-up risk in traditional silicon-controlled rectifier(SCR)devices,a high holding voltage SCR device with an embedded NPN structure is proposed.The holding voltage is increased from 1.2 V in traditional device to 10.3 V.Compared with the traditional structure,the new SCR structure has two current paths.The embedded NPN current path delays the turn-on process of the parasitic PNP transistor in the device,suppressing the positive feedback process between the NPN and PNP transistors in the SCR structure,so that the SCR current path can only be fully turned on when the current is large,thereby achieving the purpose of improving the holding voltage.The electrical characteristics of the device under direct current are simulated based on semiconductor device simulation software.The working mechanism of the device is analyzed,and the influence of key device parameters on its electrical characteristics is discussed.关键词
内嵌NPN结构/静电放电/维持电压/SCRKey words
embedded NPN structure/electrostatic discharge/holding voltage/SCR分类
电子信息工程引用本文复制引用
陈泓全,齐钊,王卓,赵菲,乔明..内嵌NPN结构的高维持电压可控硅器件[J].电子与封装,2024,24(7):75-79,5.基金项目
四川省重点研发项目(2022YFG0165) （2022YFG0165）
航空科学基金项目(201943080002) （201943080002）
重庆市自然科学基金面上项目(cstc2021jcyj-msxmX1023) （cstc2021jcyj-msxmX1023）
