电子与封装2024，Vol.24Issue(7)：80-84,5.DOI:10.16257/j.cnki.1681-1070.2024.0069
STT-MRAM存储器数据保持试验方法研究
Research on Data Retention Testing Method for STT-MRAM Memory
杨霄垒 1申浩1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
The basic storage unit structure of spin-transfer torque magnetic random access memory(STT-MRAM)is the magnetic tunnel junction(MTJ).The thermal stability of this unit weakens as the temperature increases.Due to this characteristic of the MTJ,the traditional activation energy calculation model cannot be directly applied to test the high-temperature data retention characteristics of STT-MRAM.Therefore,research on the data retention characteristics of STT-MRAM requires exploration of alternative parameters to replace the activation energy.For this purpose,a testing system based on the Xilinx Kintex-7 series FPGA is constructed to conduct data retention experiments at multiple temperatures.Ultimately,a parameter called the thermal stability factor is fitted to replace the activation energy and measure the data retention capability of STT-MRAM.This multi-temperature data fitting method of the thermal stability factor can effectively evaluate the data retention capability of STT-MRAM devices.关键词
自旋转移力矩磁随机存储器/磁性隧道结/数据保持/存储器测试Key words
spin-transfer torque magnetic random access memory/magnetic tunnel junction/data retention/memory testing分类
电子信息工程引用本文复制引用
杨霄垒,申浩..STT-MRAM存储器数据保持试验方法研究[J].电子与封装,2024,24(7):80-84,5.
