一种低功耗快速瞬态响应无片外电容LDOOA北大核心CSTPCD
A output-capacitorless LDO with fast transient response and low power
针对无片外电容LDO瞬态响应问题,提出了一种基于Miller BICMOS OTA结构的N型功率管LDO.BJT Push-Pull作为电路的中间级,具有低功耗、高增益、高摆率的特点.输出扰动通过电容耦合至中间级,形成了一条快速反馈环路,拓展了反馈环路带宽,提高了负载瞬态响应速度.因为输出级为源随器,系统整体为两级运放结构,仅需通过密勒电容进行补偿,就可以获得良好的稳定性.电路基于Hynix 180 nm BCD工艺设计,仿真结果显示,系统静态电…查看全部>>
In order to solve the problem of transient response of LDO without off-chip capacitance,an N-type power FET LDO based on Miller BICMOS OTA structure was proposed.As the intermediate stage of the circuit,BJT Push-Pull has the characteristics of low power consumption,high gain and high slew rate.The output disturbance was coupled to the intermediate stage through the capacitor,a fast feedback loop was formed,the bandwidth of the feedback loop was expanded and …查看全部>>
於汉;张涛
武汉科技大学 信息科学与工程学院,湖北 武汉 430081武汉科技大学 信息科学与工程学院,湖北 武汉 430081
电子信息工程
NMOSBICMOS OTABJT Push-Pull前馈电容
NMOSBICMOS OTABJT Push-Pullfeedforward capacitor
《电子元件与材料》 2024 (6)
713-720,8
国家自然科学基金(61873196)
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