红外技术2024，Vol.46Issue(7)：826-830,5.
高性能512×2元线列InGaAs短波红外探测器
High-Performance 512×2-Element Linear InGaAs Short-Wavelength Infrared Focal Plane Detector
朱琴 1范明国 1宋欣波 1齐浩泽 1方莉媛 1管涛 1龚晓霞1
作者信息
- 1. 昆明物理研究所,云南 昆明 650223
- 折叠
摘要
Abstract
To meet with the ongoing demand for high uniformity,low dark current and low-blind pixels of linear InGaAs short-wavelength-infrared focal plane detector in color separation industry,based on MOCVD-grown n-i-n type InP/InGaAs/InP epitaxial materials,a 512×2-element linear InGaAs short-wavelength-infrared focal plane detector was fabricated using diffusion techniques,preparation of the passivation layer,and growth of the electrode.The dark current of this detector was effectively suppressed by optimizing the structure of the detector and the passivation layer technique,Moreover,high reliability and low-blind pixels were achieved by optimizing the parameters of flip-chip interconnection.The detector assembly was tested.The measurement results show a peak detectivity of 1.13×1012 cm.Hz1/2/W,dark current density of 12.8 nA/cm2,effective pixel rate higher than 99.5%,and response non-uniformity as low as 0.63%at room temperature(25℃).关键词
InGaAs/钝化/暗电流/倒装互联Key words
InGaAs/passivation/dark current/flip chip interconnection分类
电子信息工程引用本文复制引用
朱琴,范明国,宋欣波,齐浩泽,方莉媛,管涛,龚晓霞..高性能512×2元线列InGaAs短波红外探测器[J].红外技术,2024,46(7):826-830,5.
