红外与毫米波学报2024，Vol.43Issue(3)：361-370,10.DOI:10.11972/j.issn.1001-9014.2024.03.010
基于THz-TDR的芯片金属微带线缺陷检测
Metal microstrip line defect detection of chip based on THz-TDR technology
摘要
Abstract
The current main detection methods for packaging chip defects with small size,dense wiring,and high inte-gration have drawbacks such as low accuracy and long cycle time.To compensate for the shortcomings of traditional de-tection methods,this study combines terahertz technology with time-domain reflection technology to explore the feasi-bility of detecting metal wire defects on chips.Firstly,different proportions of convex defects and concave defects were processed on metal microstrip lines of different widths to simulate incomplete opening/short circuits of metal wires in in-tegrated chips.The time-domain reflection signals were collected using a terahertz time-domain reflectometer.Then,qualitative analysis was conducted on different defect degrees and types based on the corresponding time of time-domain reflection pulses,and the defect positions of the metal wires on the chip were accurately calculated.Finally,the finite element analysis method was used to simulate and analyze the metal wires with defects on the silicon substrate,which showed perfect consistency with the experimental results.This research shows that the combined terahertz technology with time-domain reflection technology can achieve the diagnosis and detection of metal wire defects on chips,provid-ing an empirical reference for defect detection in integrated chips.关键词
太赫兹/时域反射/微带线/集成芯片/缺陷检测Key words
terahertz/time-domain reflection technology/microstrip line/integrated chip/defect detection分类
数理科学引用本文复制引用
徐振,徐德刚,刘龙海,李吉宁,张嘉昕,王坦,任翔,乔秀铭,姜晨..基于THz-TDR的芯片金属微带线缺陷检测[J].红外与毫米波学报,2024,43(3):361-370,10.基金项目
国家自然科学基金(U22A20123,62175182,62275193,U22A20353) Supported by the National Natural Science Foundation of China(U22A20123,62175182,62275193,U22A20353) （U22A20123,62175182,62275193,U22A20353）
