基于THz-TDR的芯片金属微带线缺陷检测OA北大核心CSTPCD

The current main detection methods for packaging chip defects with small size,dense wiring,and high inte-gration have drawbacks such as low accuracy and long cycle time.To compensate for the shortcomings of traditional de-tection methods,this study combines terahertz technology with time-domain reflection technology to explore the feasi-bility of detecting metal wire defects on chips.Firstly,different proportions of convex defects and concave defects were processed on metal microstrip lines of different widths to simulate incomplete opening/short circuits of metal wires in in-tegrated chips.The time-domain reflection signals were collected using a terahertz time-domain reflectometer.Then,qualitative analysis was conducted on different defect degrees and types based on the corresponding time of time-domain reflection pulses,and the defect positions of the metal wires on the chip were accurately calculated.Finally,the finite element analysis method was used to simulate and analyze the metal wires with defects on the silicon substrate,which showed perfect consistency with the experimental results.This research shows that the combined terahertz technology with time-domain reflection technology can achieve the diagnosis and detection of metal wire defects on chips,provid-ing an empirical reference for defect detection in integrated chips.