ITO/AgNWs/ITO薄膜的制备及其性能研究OA北大核心CSTPCD

With the advancement of display panel technology towards ultra-large size,ultra-high-definition and touch control capability,the traditional single indium tin oxide(ITO)film alone struggles to meet the increasingly demanding photoelectric performance requirements of display devices.Consequently,composite conductive films have been developed.This study fabricated an ITO(222)/AgNWs/ITO(400)composite film structure by embedding a two-dimensional silver nanowires(AgNWs)conductive networks into ITO films.The influences of the AgNWs addition and the sputtering temperature of the upper ITO film on the structural and optoelectronic properties of the composite film were systematically investigated.The AgNWs metal conductive networks not only enhance the electrical properties of the composite films but also maintain excellent optical characteristics.The results demonstrate that with a spin-coating of 600 μL AgNWs dispersion and a sputtering temperature of 175 ℃ for the upper ITO film,the fabricated composite ITO film has a sheet resistance of 7.13 Ω/□,an impressive transmittance of 91.52％at 550 nm,and a figure of merit of 57.82 x 10-3 Ω-1,achieving the preparation of a composite ITO film with ultra-low resistivity and high visible light transmittance.