摘要
Abstract
The development of integrated circuits in continuation of Moore's law is shifting from the Fin-gate field-effect transistor(FinFET)nanoelectronics era to the Ångstrom era at the atomic level.The development history and the latest progress of the three major innovative development hot topics in this transition stage,namely FinFET,gate-all-around field-effect transistor(GAAFET)and complementary field-effect transistor(CFET)nanoelectronics,are summarized.The current development status of Si-based CMOS integrated circuits in the FinFET nanoelectronics field is summarized and analyzed,including the innovation characteristics of five development generations covering 22 nm,14 nm,10 nm,7 nm and 5 nm,as well as the innovations and applications of 3 nm technology node.In the field of GAAFET nanoelectronics,the new structure innovations of various types of GAAFETs,the key technological breakthroughs of 2 nm technology node,the innovations and applications of multi-bridge channel field-effect transistor technology platform of 3 nm technology node,and the innovations of GAAFET related processes,device structures,circuits and materials are summarized and analyzed.The innovations of CFET technology in the field of CFET nanoelectronics,such as device models,stacking processes,cell circuit designs and three dimensional integrations,are summarized and analyzed,showing a new development trend of CFET beyond 2 nm technology node.关键词
FinFET/GAAFET/CFET/器件模型/工艺/电路设计/3D集成/智能移动终端Key words
FinFET/GAAFET/CFET/device model/process/circuit design/3D integration/intelligent mobile terminal分类
信息技术与安全科学
