电子元件与材料2024，Vol.43Issue(7)：804-808,5.DOI:10.14106/j.cnki.1001-2028.2024.0052
高均匀性1×128 SiC紫外雪崩光电二极管探测阵列
High uniformity 1×128 SiC ultraviolet avalanche photodiode detection array
摘要
Abstract
Here we designed and prepared a 1 × 128 linear array of SiC avalanche photodiode(APD),which was then further assessed for its detection uniformity of weak ultraviolet light.The results show that the breakdown voltage extracted from current-voltage curve fluctuates only±0.1 V.To characterize its detection behaviors,we used a specific passive quenching circuit to reveal its photon-level detection features.The detection behaviors show high uniformity with small fluctuation of dark count rate of±0.5 Hz/μm2 and single photon detection efficiency of±0.4％.These results demonstrate that prepared SiC APD array structure can provide a feasible solution for ultraweak ultraviolet imaging technology.关键词
雪崩光电二极管/SiC/探测阵列/高均匀性/良率Key words
avalanche photodiode/SiC/detection array/high uniformity/yield分类
信息技术与安全科学引用本文复制引用
李红旭,苏琳琳,杨成东..高均匀性1×128 SiC紫外雪崩光电二极管探测阵列[J].电子元件与材料,2024,43(7):804-808,5.基金项目
国家自然科学基金(62106111) （62106111）
江苏省高等学校基础科学(自然科学)研究项目(22KJB510043) （自然科学）
无锡市科技创新创业资金"太湖之光"科技攻关计划(K20231001) （K20231001）
无锡学院引进人才科研启动项目(550222001,2021r011,2021r012) （550222001,2021r011,2021r012）
