一种改善IMD3的高线性射频功率放大器OA北大核心CSTPCD
A high linear RF power amplifier with the improved IMD3
基于2μm砷化镓异质结双极型晶体管(GaAs HBT)工艺成功设计出了一款工作在2.4 GHz的高线性、高效率的射频功率放大器(RFPA).针对非线性因素三阶交调失真(IMD3)对电路造成的影响,采用了一种两级功放电路结构,通过对两级偏置中的旁路电路进行调节,得到了两个反相可互消的三阶交调分量,有效地改善了功放非线性指标IMD3的值.对芯片进行测试,所得结果表明:在连续单音信号测试下,功放输出的1 dB压缩点功率(P1dB)为33.3 dBm,功率附加效率(PAE)为58％@33.3 dBm,增益为30.8 dB.在音距为1 MHz的双音信号测试下,三阶交调失真低于-50 dBc@20 dBm,最大三阶输出截断点(OIP3)为47 dBm@23.8 dBm.
A 2.4 GHz radio frequency power amplifier(RF PA)was successfully designed with high linearity and efficiency using a 2 μm gallium arsenide heterojunction bipolar transistor(GaAs HBT)technology.To address the third-order intermodulation distortion(IMD3)caused by nonlinear effect,a two-stage amplifier circuit structure was adopted.By optimizing the bypass circuits in the two-stage bias network,two cancelable third-order intermodulation components were obtained,and the IMD3 of the power amplifier was effectively improved.Under continuous single-tone signal testing,it shows that the power amplifier achieves a 1 dB compression point power(P1dB)of 33.3 dBm,a power-added efficiency(PAE)of 58％at 33.3 dBm,and a gain of 30.8 dB.Additionally,with a tone spacing of 1 MHz,the measured IMD3 is below-50 dBc at 20 dBm,and the maximum third-order output intercept point(OIP3)is 47 dBm at 23.8 dBm.
张超然;杨以俊;孙晓红
苏州科技大学电子与信息工程学院,江苏苏州 215009
电子信息工程
三阶交调失真射频功率放大器高线性度异质结双极型晶体管
third order intermodulation distortionradio frequency power amplifierhigh linearityheterojunction bipolar transistor
《电子元件与材料》 2024 (007)
872-877 / 6
国家自然科学基金(62104167)
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