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考虑不同个性特征的忆阻记忆电路OA北大核心CSTPCD

Memory circuit based upon memristors of different traits

中文摘要英文摘要

提出了一种考虑不同个性特征的忆阻记忆电路,该电路由感知模块、情感生成模块和记忆突触模块组成.为了正确模拟生物神经元从感知刺激到响应的过程,在感知模块中采用易失性忆阻器来构建感知神经元.情感生成模块利用阈值型忆阻器作为情感突触,实现了不同人格到情绪的转换.记忆突触模块则整合情绪信号和学习信号,利用忆阻突触的可塑性实现学习和遗忘的功能.PSPICE仿真结果表明,所提出电路能正确模拟不同个性特征对记忆的影响.

A memristor circuit was proposed by considering the traits of memristors on the memory function.The proposed circuit consisted of a perception module,an emotion generating module and a memory synapse module.To correctly simulate the process from sensing stimulus to response of biological neurons,a volatile memristor was used to construct a sensory neuron in the perception module.The emotion generation module used threshold memristors as emotion synapses to realize the conversion from the memristors of different traits to corresponding emotions.The memory synaptic module integrates the emotional and learning signals,and realizes the function of learning and forgetting by using the plasticity of memristor.PSPICE simulation results show that the proposed circuit can correctly simulate the effects of different traits on the memory function.

高铭;李志军

湘潭大学自动化与电子信息学院,湖南湘潭 411105

电子信息工程

忆阻器个性特征情绪记忆电路

memristortraitsemotionmemory circuit

《电子元件与材料》 2024 (007)

884-891 / 8

国家自然科学基金(62171401);国家自然科学基金(62071411)

10.14106/j.cnki.1001-2028.2024.1282

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