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Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Shijie Pan Shiwei Feng Xuan Li Zixuan Feng Xiaozhuang Lu Kun Bai Yamin Zhang

Journal of Semiconductors2024，Vol.45Issue(9)：P.70-75,6.

Journal of Semiconductors2024，Vol.45Issue(9)：P.70-75,6.DOI:10.1088/1674-4926/24020020

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Shijie Pan ¹Shiwei Feng ¹Xuan Li ²Zixuan Feng ¹Xiaozhuang Lu ¹Kun Bai ¹Yamin Zhang¹

作者信息

1. College of Microelectronics,Beijing University of Technology,Beijing 100124,China
2. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
折叠

摘要

关键词

AlGaN/GaN HEMT/electron radiation/performance degradation/device damage

分类

信息技术与安全科学

引用本文复制引用

Shijie Pan,Shiwei Feng,Xuan Li,Zixuan Feng,Xiaozhuang Lu,Kun Bai,Yamin Zhang..Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J].Journal of Semiconductors,2024,45(9):P.70-75,6.

基金项目

supported by the Key Program of the National Natural Science Foundation of China (Grant No. 62334002) （Grant No. 62334002）

the National Natural Science Foundation of China (Grant No. 62174008)。（Grant No. 62174008）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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