红外与毫米波学报2024，Vol.43Issue(4)：450-456,7.DOI:10.11972/j.issn.1001-9014.2024.04.003
基于AlAsSb/InAsSb超晶格势垒的InAs/InAsSb Ⅱ类超晶格nBn中波红外探测器
Mid-wavelength infrared nBn photodetectors based on InAs/InAsSb type-Ⅱ superlattice with an AlAsSb/InAsSb superlattice barrier
摘要
Abstract
InAs/InAsSb type-Ⅱ superlattice(T2SL)materials hold great promise for the development of mid-wave-length infrared photodetectors operating at high temperatures,as they avoid the defects caused by Ga atoms in InAs/GaSb T2SL and exhibit long minority carrier lifetime.To reduce the dark current,minority carrier unipolar barrier struc-tures,such as nBn detectors,are commonly employed.In mid-wavelength infrared InAs/InAsSb T2SL nBn photodetec-tors,the multielement alloy such as AlAsSb is typically utilized as the barrier layer to block the transport of majority car-riers.However,the small valence band offset(VBO)between the barrier and absorption layers leads to the saturation of photocurrent at high bias voltage,resulting in increased dark current.In this work,an AlAsSb/InAsSb T2SL barrier was designed to eliminate the VBO and reduce the bias dependency of quantum efficiency.The results show that the fab-ricated nBn photodetector exhibits a 50%cutoff wavelength of 4.5 μm at 150 K.The optical response of the photodetec-tor saturates under a small bias of-50 mV,achieving a peak responsivity of 1.82 A/W at 3.82 μm and a quantum effi-ciency of 58.8%.At 150 K and-50 mV applied bias,the photodetector exhibits a dark current density of 2.01×10-5 A/cm2 and a specific detectivity of 6.47×1011 cm·Hz1/2/W.关键词
InAs/InAsSb/Ⅱ类超晶格/AlAsSb/InAsSb势垒/中波红外/势垒探测器Key words
InAs/InAsSb/type-Ⅱ superlattice/AlAsSb/InAsSb barrier/mid-wavelength infrared/barrier detector分类
信息技术与安全科学引用本文复制引用
单一凡,徐应强,牛智川,吴东海,谢若愚,周文广,常发冉,李农,王国伟,蒋洞微,郝宏玥..基于AlAsSb/InAsSb超晶格势垒的InAs/InAsSb Ⅱ类超晶格nBn中波红外探测器[J].红外与毫米波学报,2024,43(4):450-456,7.基金项目
Supported by the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(E27RBB03) （E27RBB03）
