Journal of Semiconductors2024，Vol.45Issue(10)：P.1-2,2.DOI:10.1088/1674-4926/24070013
Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors
Youla Yang 1Daixuan Wu 2He Tian 1Tian-Ling Ren1
作者信息
- 1. School of Integrated Circuit,Tsinghua University,Beijing 100083,China
- 2. School of Integrated Circuit,Tsinghua University,Beijing 100083,China School of Instrument Science and Technology,Xi''an Jiaotong University,Xi''an 710049,China
- 折叠
摘要
关键词
silver/epitaxial/dimensional分类
信息技术与安全科学引用本文复制引用
Youla Yang,Daixuan Wu,He Tian,Tian-Ling Ren..Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors[J].Journal of Semiconductors,2024,45(10):P.1-2,2.
