电子与封装2024，Vol.24Issue(11)：8-13,6.DOI:10.16257/j.cnki.1681-1070.2024.0174
GaNHEMT热特性的反射热成像研究
Research on Thermal Characteristics of GaN HEMTs Through Thermoreflectance Thermal Imaging
摘要
Abstract
GaN high electron mobility transistors(HEMTs)have been widely used in various fields of power electronics,but the thermal bottleneck caused by high power density needs to be solved.Thermoreflectance thermal imaging emerges as a technique with high spatial resolution for temperature mapping,and it is suitable for capturing the operational temperature of HEMT s to formulate appropriate thermal management strategies.Temperature distributions of the field plate and drain of six types of GaN HEMTs are tested by thermoreflectance thermal imaging system,and the deviation between experimental and simulation results is within 6％.Thermal resistance analysis is used to compare the effects of different substrate thicknesses and epitaxial designs on thermal performance of devices.The thermal resistance of substrate accounts for more than 40％of the total thermal resistance.When the thickness of substrate is reduced from 100 μm to 60 μm,the thermal resistance is reduced by 8.1％,and the impact of substrate thinning on the reduction of the thermal resistance is significantly greater than that of epitaxial design changes.These above results highlight the importance of thermoreflectance thermal imaging method for guiding thermal optimization of devices.关键词
GaNHEMT/反射热成像/温度场/热优化Key words
GaN HEMT/thermoreflectance thermal imaging/temperature mapping/thermal optimization分类
信息技术与安全科学引用本文复制引用
刘智珂,曹炳阳..GaNHEMT热特性的反射热成像研究[J].电子与封装,2024,24(11):8-13,6.基金项目
国家自然科学基金(52327809,52425601,U20A20301) （52327809,52425601,U20A20301）
国家重点研发计划(2023YFB4404104) （2023YFB4404104）
