电子与封装2024，Vol.24Issue(11)：48-54,7.DOI:10.16257/j.cnki.1681-1070.2024.0159
面向大功率器件散热的金刚石基板微流道仿真研究
Simulation Study on Diamond Substrate Microfluidic Channel for Heat Dissipation of High Power Devices
摘要
Abstract
GaN power devices have many advantages such as high frequency,high power and high anti-interference ability.With the miniaturization and high integration of GaN power devices,the heat dissipation problem of the devices is becoming more and more prominent.Diamond with high thermal conductivity has become a competitive heat dissipation material to meet the heat dissipation needs of high power devices.A new type of multilayer embedded microfluidic channel diamond substrate heat dissipation technology is used to achieve rapid heat dissipation of the device,and the effects of several single factors,such as the width of heat dissipation microfluidic channels,the number of manifold microfluidic channels and the fluid flow rate,on the thermal performance of the device are analyzed,and the influence of different factors on the heat dissipation performance of the device is investigated by orthogonal test.The results show that the fluid flow rate has the most significant influence on the heat dissipation performance at a 99％confidence level.The effect of the diameter of the heat sink microfluidic channel is more significant,and the effect of the number of manifold microfluidic channels is not significant.关键词
功率器件/金刚石/嵌入式微流道/正交试验法Key words
power device/diamond/embedded microfluidic channel/orthogonal test method分类
信息技术与安全科学引用本文复制引用
孙浩洋,姬峰,张晓宇,兰梦伟,李鑫宇,冯青华,兰元飞,王明伟..面向大功率器件散热的金刚石基板微流道仿真研究[J].电子与封装,2024,24(11):48-54,7.基金项目
国家自然科学基金"叶企孙"科学基金(U2141218) （U2141218）
