电子与封装2024，Vol.24Issue(11)：73-80,8.DOI:10.16257/j.cnki.1681-1070.2024.0153
金刚石离子注入射程及损伤的模拟研究
Simulation Research on the Ion Implantation Range and Damage of Diamond
袁野 1赵瓛 1姬常晓 1黄华山 1倪安民 1杨金石1
作者信息
- 1. 中国电子科技集团公司第四十八研究所,长沙 410111
- 折叠
摘要
Abstract
As an effective method to improve the electrical properties of semiconductor material surface,ion implantation method has been applied in the manufacturing process of diamond-based semiconductor devices.The ranges of Ar+,N+,B+,P+,As+and other ions injected into diamond at different energies(20-300 keV)and different incidence angles(0°-40°)and the damage caused to diamond are simulated and studied by using SRIM software.The results show that the type,energy and injection angle of ions are important factors that affect the range of ions and the damage of target material,and each of them has its own influence law.By changing these parameters,the range of implanted ions in diamond and the damage degree of target material can be accurately controlled,which provides guidance for scientific research and production.关键词
金刚石/离子注入/射程/靶材损伤Key words
diamond/ion implantation/range/damage of target material分类
信息技术与安全科学引用本文复制引用
袁野,赵瓛,姬常晓,黄华山,倪安民,杨金石..金刚石离子注入射程及损伤的模拟研究[J].电子与封装,2024,24(11):73-80,8.
