电子与封装2024，Vol.24Issue(11)：81-85,5.DOI:10.16257/j.cnki.1681-1070.2024.0161
用于Si-APD的高能注入工艺优化研究
Optimization Study of High-Energy Implantation Process for Si-APD
刘祥晟 1荆思诚 1王晓媛 1张明 1陈慧蓉 1潘建华 1朱少立1
作者信息
- 1. 无锡中微晶园电子有限公司,江苏无锡 214035
- 折叠
摘要
Abstract
The implantation energy of the avalanche region has the significant influence on the performance of silicon based avalanche photodiodes,and the large-beam high energy implantation process requires high equipment costs.Through theoretical simulation calculation and experimental wafer fabrication,the implantation energy of avalanche region is adjusted and the diffusion time of avalanche region is increased,and the implantation energy is reduced from 600 keV to 390 keV,and compared in the low cost of medium-beam ion implanter.The performance of the device before and after optimization meets the specification requirements,and there is no obvious difference in parameters.The process method is simple and controllable,which can effectively reduce the cost of equipment for ion implantation and improve the productivity of the silicon avalanche photodiode.关键词
雪崩光电二极管/高能注入/反向击穿Key words
avalanche photodiode/high energy implantation/reverse breakdown分类
信息技术与安全科学引用本文复制引用
刘祥晟,荆思诚,王晓媛,张明,陈慧蓉,潘建华,朱少立..用于Si-APD的高能注入工艺优化研究[J].电子与封装,2024,24(11):81-85,5.
