电子与封装2024，Vol.24Issue(12)：38-42,5.DOI:10.16257/j.cnki.1681-1070.2024.0163
4通道X波段50 W功放模块设计
Design of 4-Channel X-Band 50 W Power Amplifier Module
王洪刚 1丛龙兴1
作者信息
- 1. 中国电子科技集团公司第五十一研究所,上海 200000
- 折叠
摘要
Abstract
Based on array application of GaN power amplifier module,a 4-channel X-band 50 W power amplifier module is designed using GaN power monoliths and gate modulation.In the frequency band of 8-12 GHz,with the operating voltage of+28 V,a pulse width of 200 ns-700 μs and a pulse period of 1 μs-2.8 ms,the power gain is more than 42 dB,the power additive efficiency exceeds 28.7％,and the saturated output power is more than 47 dBm.关键词
功放模块/GaN/栅极/X波段/50 WKey words
power amplifier module/GaN/gate/X-band/50 W分类
信息技术与安全科学引用本文复制引用
王洪刚,丛龙兴..4通道X波段50 W功放模块设计[J].电子与封装,2024,24(12):38-42,5.
