电子与封装2024，Vol.24Issue(12)：54-59,6.DOI:10.16257/j.cnki.1681-1070.2024.0166
单BJT支路运放失调型带隙基准电路
Single BJT Branch Operational Amplifier Offset Bandgap Reference Circuit
王星 1相立峰 1张国贤 1孙俊文 1崔明辉1
作者信息
- 1. 中国电子科技集团第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
A single bipolar junction transistor(BJT)branch operational amplifier offset bandgap reference circuit is proposed.Compared with traditional bandgap references,the proposed bandgap reference has fewer BJTs and passive components,and lower power consumption.The emitter base voltage VBE of the BJT with this bandgap reference structure is inversely proportional to absolute temperature(CTAT).Based on the unbalanced input of the operational amplifier operating in the subthreshold region,the difference in gate drain voltage ΔVGS of the transistor is proportional to absolute temperature(PTAT).The bandgap reference voltage is obtained by linearly superimposing a single BJT branch.The proposed circuit consists of a closed-loop negative feedback system consisting of two-stage operational amplifiers and a single BJT branch with source following function.The operational amplifier circuit uses Miller capacitors for frequency compensation to improve system stability.In addition,by increasing the output capacitance at the output node,the power supply rejection ratio(PSRR)under high frequency conditions can be improved.The proposed bandgap reference circuit is manufactured based on the standard SMIC 55 nm CMOS mixed signal process,achieving a temperature coefficient of 15.7×10-6/℃ in the range of-55-125 ℃.The reference output voltage is 1.27 V,and the PSRR is-39.65 dB,-39.65 dB and-33.81 dB at 1 Hz,1 kHz,and 10 MHz,respectively.The power consumption is 0.730 μW,the circuit stabilization time is 20 μs,and it dose not need a startup circuit and has good performance indicators.关键词
带隙基准/温度系数/单BJT支路/亚阈值区Key words
bandgap reference/temperature coefficient/single BJT branch/subthreshold region分类
信息技术与安全科学引用本文复制引用
王星,相立峰,张国贤,孙俊文,崔明辉..单BJT支路运放失调型带隙基准电路[J].电子与封装,2024,24(12):54-59,6.
