电子与封装2024，Vol.24Issue(12)：71-79,9.DOI:10.16257/j.cnki.1681-1070.2024.0168
GaN HEMT器件表面钝化研究进展
Research Progress in Surface Passivation of GaN HEMT Devices
摘要
Abstract
As one of the third-generation semiconductor materials,GaN has been widely used in the preparation of high-frequency,high-power and high-breakdown voltage AlGaN/GaN HEMT devices due to its excellent material properties,such as high-breakdown field strength,high electron mobility and good thermal conductivity.However,there are still a series of reliability problems such as current collapse,gate leakage current and frequency dispersion,which restrict the large-scale application of AlGaN/GaN HEMT devices.Surface passivation is considered to be one of the most effective methods to improve these problems.The test and characterization methods of current collapse and interface state are summarized,and the research progress of GaN surface passivation is reviewed.关键词
GaN HEMT器件/MIS-HEMT/钝化/电流崩塌/栅泄漏电流Key words
GaN HEMT device/MIS-HEMT/passivation/current collapse/gate leakage current分类
信息技术与安全科学引用本文复制引用
陈兴,党睿,李永军,陈大正..GaN HEMT器件表面钝化研究进展[J].电子与封装,2024,24(12):71-79,9.基金项目
国家自然科学基金(62274126) （62274126）
