电子元件与材料2025，Vol.44Issue(1)：24-32,9.DOI:10.14106/j.cnki.1001-2028.2025.1455
基于动态复合寿命的LED多量子阱载流子分布计算
Calculation of carrier distribution in LED multiple quantum wells based on dynamic recombination lifetime
摘要
Abstract
In order to obtain a more accurate carrier lifetime and concentration distribution of multi-quantum well(MQWs)light-emitting diodes(LED)under positive bias,the composite characteristics and distribution characteristics of LED multi-quantum wells under dynamic composite lifetime conditions were studied.In the study,AlGaInP/GaInP MQWs materials were grown using metal organic chemical vapor deposition(MOCVD)equipment and processed into red light LED devices.The carrier recombination lifetime of the LED was tested using time-resolved spectroscopy.A carrier calculation model for MQWs LED was established by combining the material and device structural parameters,and the carrier lifetime equation and carrier continuity equation in the MQWs region were solved using an iterative method.The results confirmed that the carrier lifetime was affected by multiple carrier recombination mechanisms,and the lifetime varied dynamically under different forward voltages and carrier concentrations.The carrier concentration distribution in the MQWs region of the LED,calculated based on dynamic carrier lifetime results,showed the carrier concentration increased first and then decreased with increasing bias voltage.The main reason was the rapid decrease in carrier recombination lifetime under high injection voltage conditions.By comparing the MQWs carrier concentration results obtained from dynamic carrier lifetime model calculations and the results obtained using fixed lifetime values,it turned out that the carrier distribution calculations based on dynamic lifetime in this study were more closely matched with the experimental results of the actual device.关键词
发光二极管/多量子阱/载流子寿命/AlGaInP/GaInPKey words
light emitting diode/multiple quantum wells/carrier lifetime/AlGaInP/GaInP分类
电子信息工程引用本文复制引用
冯晓雨,肖秧,房永恒,田海涛,刘宏伟,张东炎..基于动态复合寿命的LED多量子阱载流子分布计算[J].电子元件与材料,2025,44(1):24-32,9.基金项目
天津市科技局资助项目(23YDTPJC00370) （23YDTPJC00370）
天津市光电检测技术与系统重点实验室资助项目(2023LOTDS003) （2023LOTDS003）
天津市普通高等学校本科教学改革与质量建设研究计划(B231005812) （B231005812）
