电子元件与材料2025，Vol.44Issue(1)：103-109,7.DOI:10.14106/j.cnki.1001-2028.2025.1432
嘧啶提高多晶硅CMP去除速率的机理研究
Mechanism of CMP removal rate improvment of polycrystalline silicon with pyrimidine
摘要
Abstract
In order to improve the removal rate of polysilicon,the mechanism of pyrimidine on the polysilicon surface was revealed from chemical and mechanical aspects.On the one hand,X-ray photoelectron spectroscopy experiments showed that pyrimidine was adsorbed on the surface of polycrystalline silicon,by which the polarization fracture of Si-Si bond and the formation of Si-O bond was promoted,and the formation and mechanical removal rate of this soft layer on the surface of polycrystalline silicon was accelerated.On the other hand,Zeta potential and friction data showed that the pyrimidine cation produced by pyrimidine hydrolysis reduced the electrostatic repulsion between SiO2 abrasives,resulting in increasing friction between surfaces and polysilicon during CMP.In addition,the increase of temperature accelerated the rate of chemical reaction in the CMP process,thus the chemical reaction was promoted.Therefore,the addition of pyrimidine not only improves the chemical effect,but also strengthens the mechanical effect,As a result,the removal rate of polysilicon is increased by about 2.8 times.关键词
化学机械抛光(CMP)/多晶硅/嘧啶/去除速率Key words
chemical mechanical polishing(CMP)/polysilicon/pyrimidine/removal rate分类
信息技术与安全科学引用本文复制引用
张潇,周建伟,杨云点,罗翀,栾晓东,邵祥清,李瑾..嘧啶提高多晶硅CMP去除速率的机理研究[J].电子元件与材料,2025,44(1):103-109,7.基金项目
河北工业大学创新研究院(石家庄)石家庄市科技合作专项基金(SJZZXB23003) （石家庄）
国家自然科学基金(62074049) （62074049）
中国博士后基金(2024M751207) （2024M751207）
