电子与封装2025，Vol.25Issue(3)：32-46,15.DOI:10.16257/j.cnki.1681-1070.2025.0053
第三代半导体封装结构设计及可靠性评估技术研究进展
Research Progress of Packaging Structure Design and Reliability Evaluation Technology for Third-Generation Semiconductors
摘要
Abstract
Third-generation semiconductor materials,such as SiC and GaN,demonstrate significant potential in power electronics due to their excellent properties.In order to fully exploit the advantages of these materials,advanced packaging technologies are essential to tackle challenges in electrical interconnections,mechanical support,and thermal management.Focusing on the research progress of third-generation semiconductor packaging structures,the characteristics and optimization effects of the new packaging structures in recent years are classified and summarized,focusing on three development directions of minimizing parasitic electrical parameters,reducing thermal resistance,and enhancing integration levels.Based on the new packaging structures,the reliability problems and the current reliability testing standards and methods are summarized,the existing problems and shortcomings are discussed,and the future developing trends of packaging technology for third-generation semiconductors are prospected.关键词
第三代半导体/功率器件/封装结构/可靠性评估Key words
third-generation semiconductor/power device/packaging structure/reliability evaluation分类
电子信息工程引用本文复制引用
郑佳宝,李照天,张晨如,刘俐..第三代半导体封装结构设计及可靠性评估技术研究进展[J].电子与封装,2025,25(3):32-46,15.基金项目
中国科协科技智库青年人才计划(XMSB20240710047) （XMSB20240710047）
武汉市知识创新专项曙光计划(2023010201020320) （2023010201020320）
