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功率器件封装纳米浆料材料与低温烧结工艺及机理研究进展

王一平 于铭涵 王润泽 佟子睿 冯佳运 田艳红

电子与封装2025,Vol.25Issue(3):60-77,18.
电子与封装2025,Vol.25Issue(3):60-77,18.DOI:10.16257/j.cnki.1681-1070.2025.0058

功率器件封装纳米浆料材料与低温烧结工艺及机理研究进展

Advances in Nanopaste Materials and Low Temperature Sintering Process and Mechanism for Power Device Packaging

王一平 1于铭涵 2王润泽 3佟子睿 3冯佳运 3田艳红1

作者信息

  • 1. 哈尔滨工业大学材料结构精密焊接与连接全国重点实验室,哈尔滨 150001||哈尔滨工业大学郑州研究院,郑州 450000
  • 2. 哈尔滨工业大学郑州研究院,郑州 450000
  • 3. 哈尔滨工业大学材料结构精密焊接与连接全国重点实验室,哈尔滨 150001
  • 折叠

摘要

Abstract

With the development of materials for power electronic devices,third-generation wide-bandgap semiconductors(such as SiC and GaN)have emerged as ideal materials for power devices due to their remarkable performance.However,facing the challenges of high-power and high-temperature applications,traditional tin-based packaging materials have difficulties in meeting the requirements of high-power and high-temperature applications.As a result,researchers have begun to focus on nanosintered pastes that can be sintered at low temperatures and serve at high temperatures.These micro-and nano-scale copper and silver pastes can be sintered at temperatures well below the melting point of the metal to form solder joint structures with a high melting point,high thermal conductivity,and high performance.The research progress of sintered pastes for power device packaging in recent years is discussed from three aspects:sintering materials,sintering process,and sintering mechanism,specifically including nano Ag,nano Cu,Ag-Cu composites,and other nano-sized sintering materials,as well as their corresponding processes such as thermal pressure sintering,pressureless sintering,and thin-film sintering techniques,in order to provide references for the further development of sintering pastes.

关键词

纳米浆料/烧结/功率器件/电子封装技术/烧结纳米铜

Key words

nano paste/sinter/power device/electronics packaging technology/sinter nano Cu

分类

电子信息工程

引用本文复制引用

王一平,于铭涵,王润泽,佟子睿,冯佳运,田艳红..功率器件封装纳米浆料材料与低温烧结工艺及机理研究进展[J].电子与封装,2025,25(3):60-77,18.

基金项目

国家自然科学基金(52205352) (52205352)

国家自然科学基金联合基金-"叶企孙"科学基金(U2241223) (U2241223)

电子与封装

1681-1070

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