电子与封装2025，Vol.25Issue(3)：78-83,6.DOI:10.16257/j.cnki.1681-1070.2025.0063
基于低温铜烧结技术的大功率碳化硅模块电热性能表征
Characterization of Electrothermal Properties of High-Power Silicon Carbide Modules Based on Low-Temperature Copper Sintering Technology
摘要
Abstract
The specific on-resistance of SiC devices is only 1/5 of that of Si-based devices,showing greater advantages in the field of automotive grade packaging with high frequency,high temperature,and high power density.However,the high flow density of SiC devices puts forward higher requirements for their heat dissipation design.Although sintered silver with high thermal conductivity,low process temperature and high service temperature is helpful to optimize the thermal management of power modules,there are problems of high cost and electromigration of sintered silver.An all-copper sintering interconnect method for SiC devices has been proposed to address the above issues,and the shear strength of the high-quality copper interconnect layer exceeds 130 MPa.Compared with the traditional power module,the junction-case thermal resistance of the all-copper sintered power module is reduced by 6.12 K/kW(12.47％).The dynamic and static test results show that the module has good electrical property.关键词
功率模块封装/铜烧结/铜线键合Key words
power module packaging/copper sintering/copper wire bonding分类
电子信息工程引用本文复制引用
闫海东,蒙业惠,刘昀粲,刘朝辉..基于低温铜烧结技术的大功率碳化硅模块电热性能表征[J].电子与封装,2025,25(3):78-83,6.基金项目
国家重点研发计划(2021YFB3602303) （2021YFB3602303）
