电子与封装2025，Vol.25Issue(3)：123-133,11.DOI:10.16257/j.cnki.1681-1070.2025.0104
GaN芯片封装技术研究进展与趋势
Research Progress and Trend of GaN Chip Packaging Technology
摘要
Abstract
As a third-generation semiconductor material,GaN is widely used in high-frequency and high-power electronic devices because of its excellent characteristics such as high electron mobility and high breakdown field strength.However,its packaging technology faces challenges such as thermal management,electrical performance optimization,and packaging reliability,as well as the need to be more compact and integrated.Various solutions for GaN chip packaging are discussed,including discrete device packaging structures of transistor outline(TO)packaging and quad-flat no-lead(QFN)packaging,closed device packaging structures of wafer-level packaging(WLP)and multi-chip module(MCM),and many advanced packaging technologies.The development trend of packaging technology is analyzed,such as integration,modular packaging,and optimization methods for high-frequency and high-power applications.With the continuous breakthrough of technology,GaN packaging is expected to make further progress in the direction of more efficient and more reliable to meet the growing market demand.关键词
GaN/芯片封装/先进封装/散热/寄生电感/3D集成Key words
GaN/chip packaging/advanced packaging/heat dissipation/parasitic inductance/3D integration分类
信息技术与安全科学引用本文复制引用
宋海涛,敖金平,王霄,龚平,朱霞,李杨,刘璋成,闫大为,陈治伟,尤杰..GaN芯片封装技术研究进展与趋势[J].电子与封装,2025,25(3):123-133,11.基金项目
国家自然科学基金(62104183,61991442) （62104183,61991442）
江苏省重点研发计划产业前瞻与关键核心技术(BE2023007-1) （BE2023007-1）
中央高校基本科研业务费(JUSRP123057,JUSRP123058,JUSRP123059) （JUSRP123057,JUSRP123058,JUSRP123059）
