电子与封装2025，Vol.25Issue(5)：28-42,15.DOI:10.16257/j.cnki.1681-1070.2025.0075
先进铜填充硅通孔制备技术研究进展
Research Progress on Advanced Copper-Filled Through Silicon Via Preparation Technology
摘要
Abstract
With the advent of the post-Moore's era,through silicon via(TSV)technology has achieved electrical interconnections between multilayer chips by filling copper as vertical conductive pathways,providing a high-performance,high-reliability 3D packaging interconnection solution.The preparation techniques of copper in TSV advanced interconnection technology are reviewed.The deposition mechanisms,performance advantages and disadvantages,and improvement schemes of five different copper seed layer preparation processes including sputtering,chemical vapor deposition,atomic layer deposition,electroless plating and electrografting are summarized and compared.Three different schemes for filling TSV with copper are presented,including electroplating,electroless plating and conductive paste filling techniques.The influence of electroplating process,current,additives and annealing process on the electroplating copper in TSV is emphasized,and the future development direction of advanced copper interconnection technology applied to TSV is prospected.关键词
铜填充硅通孔/先进封装/电镀/种子层Key words
copper-filled through silicon via/advanced packaging/electroplating/seed layer分类
电子信息工程引用本文复制引用
刘旭东,撒子成,李浩喆,李嘉琦,田艳红..先进铜填充硅通孔制备技术研究进展[J].电子与封装,2025,25(5):28-42,15.基金项目
国家自然科学基金(U2241223) （U2241223）
