电子与封装2025，Vol.25Issue(5)：55-61,7.DOI:10.16257/j.cnki.1681-1070.2025.0086
铜-铜键合制备多层陶瓷基板技术研究
Technical Study on Preparation of Multilayer Ceramic Substrates by Cu-Cu Bonding
摘要
Abstract
To improve the integration of power device packaging,a new type of multilayer ceramic substrate is prepared by vertically stacking direct copper plated(DPC)ceramic substrates through Cu-Cu hot pressing bonding.The copper surface is treated using electroplating technology,and the process conditions for Cu-Cu hot pressing bonding are explored.The results indicate that at a current density of 2 A/dm2(ASD),highly(111)oriented crystal structure metallic copper can be prepared with low surface roughness,which is beneficial for Cu-Cu hot pressing bonding.At 250 ℃ and a pressure of 24 MPa,high-strength bonding(strength up to 32.34 MPa)is achieved by electroplating copper with a highly(111)-oriented crystal structure,and a multilayer ceramic substrate containing a cavity structure is prepared with high reliability.关键词
铜-铜键合/多层陶瓷基板/直接镀铜陶瓷基板/可靠性Key words
Cu-Cu bonding/multilayer ceramic substrate/direct plated copper ceramic substrate/reliability分类
电子信息工程引用本文复制引用
雷振宇,陈浩,翟禹光,王莎鸥,陈明祥..铜-铜键合制备多层陶瓷基板技术研究[J].电子与封装,2025,25(5):55-61,7.基金项目
国家自然科学基金(62274069) （62274069）
