电子与封装2025，Vol.25Issue(5)：62-77,16.DOI:10.16257/j.cnki.1681-1070.2025.0110
三维集成铜-铜低温键合技术的研究进展
Research Progress of Three-Dimensional Integrated Copper-Copper Low-Temperature Bonding Technology
摘要
Abstract
The increasing demand for high performance,high integration,and low power consumption in integrated circuit manufacturing has led to the adoption of three-dimensional integrated circuit(3D IC)technology as an effective solution for enhancing chip performance and integration.Copper,due to its low resistivity,excellent thermal conductivity,and resistance to electromigration,provides efficient electrical connections and effective thermal management.Low-temperature Cu-Cu bonding technology has become one of the core technologies in advanced packaging,owing to its advantages in high-density interconnections,excellent electrical conductivity and thermal performance.Challenges associated with Cu-Cu bonding technology and their corresponding solutions are discussed,several major low-temperature bonding techniques are summarized,and their advantages and limitations in practical applications are analyzed.Although Cu-Cu low-temperature bonding technology faces many technical bottlenecks,with the continuous advancement in materials and processes,it still has significant promise for future applications in electronic packaging.关键词
三维集成/Cu-Cu键合/低温键合/表面处理/先进封装Key words
three-dimensional integration/Cu-Cu bonding/low-temperature bonding/surface treatment/advanced packaging分类
电子信息工程引用本文复制引用
陈桂,邵云皓,屈新萍..三维集成铜-铜低温键合技术的研究进展[J].电子与封装,2025,25(5):62-77,16.
