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基于FDR的SiC-MOSFET栅极氧化层失效无损检测方法研究

张俊杰 贠明辉 谭亮 韩兴国 蔡苗

电子元件与材料2025,Vol.44Issue(3):251-258,8.
电子元件与材料2025,Vol.44Issue(3):251-258,8.DOI:10.14106/j.cnki.1001-2028.2025.1468

基于FDR的SiC-MOSFET栅极氧化层失效无损检测方法研究

Non-destructive detection method for gate oxide layer failure in SiC-MOSFET based on FDR

张俊杰 1贠明辉 2谭亮 3韩兴国 4蔡苗1

作者信息

  • 1. 桂林电子科技大学机电工程学院,广西桂林 541004
  • 2. 桂林电子科技大学机电工程学院,广西桂林 541004||桂林航天工业学院广西特种工程装备与控制重点实验室,广西桂林 541004||桂林电力电容器有限责任公司,广西桂林 541004
  • 3. 桂林电力电容器有限责任公司,广西桂林 541004
  • 4. 桂林航天工业学院广西特种工程装备与控制重点实验室,广西桂林 541004
  • 折叠

摘要

Abstract

It is critical to develop a non-destructive testing method for gate oxide layer failure for improving the reliability of SiC-MOSFETs.Here a small-signal equivalent circuit model was firstly constructed based on the actual physical structure of the SiC-MOSFET,which was then transformed into a frequency-domain impedance characterization model to suit the T-network analysis.After that,a frequency domain reflectometry(FDR)technique was employed to achieve precise determination of the parasitic parameters.Finally,a test platform was established for static high-temperature gate bias aging.The threshold voltage(VGS(th))aging tests were sequentially conducted for durations from 200 to 1000 hours.The results show that after the aging the VGS(th)of all SiC-MOSFETs(sample 1-5)exhibit positive drift.The corresponding parasitic capacitance CGS and CGD continuously increases and decreases respectively,and small impact is observed for CDS·Specifically,for the severely degraded device of No.5,CDS only varies by-0.78%,while CGS increases by 6.65%,and CGD significantly decreases by 23.75%.Furthermore,the resonant frequencies of its frequency-domain impedance curves(Z11,Z12,Z21and Z22)have all increased,and the Z22 impedance at 100 kHz significantly decreases,which indicates that a mapping characteristic is highly correlated with the gate oxide layer failure.Based on the FDR technique,it is possible to achieve rapid and non-destructive detection of gate oxide failure without relying on the conduction state of the power device and additional test circuits,which has broad application.

关键词

SiC-MOSFET/栅极氧化层失效/无损检测/FDR技术/寄生电容

Key words

SiC-MOSFET/gate oxide layer failure/non-destructive detection/FDR technique/parasitic capacitance

分类

电子信息工程

引用本文复制引用

张俊杰,贠明辉,谭亮,韩兴国,蔡苗..基于FDR的SiC-MOSFET栅极氧化层失效无损检测方法研究[J].电子元件与材料,2025,44(3):251-258,8.

基金项目

国家自然科学基金(62264003) (62264003)

广西自然科学基金面上项目(2023GXNSFAA026188) (2023GXNSFAA026188)

自治区级大学生创新创业训练计划项目(S202410595311) (S202410595311)

电子元件与材料

OA北大核心

1001-2028

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