电子元件与材料2025，Vol.44Issue(3)：259-264,6.DOI:10.14106/j.cnki.1001-2028.2025.1424
具有自偏置MOS空穴抽取通路和阻塞结的IGBT
IGBT with self-biased MOS hole extraction pathways and blocking junction
摘要
Abstract
To reduce the turn-off loss(EOFF)and improve the compromise relationship between the turn-on voltage(VON)and the EOFF of Insulated Gate Bipolar Transistor(IGBT),a blocking junction IGBT with self-biased MOS hole extraction path(APBJ-IGBT)was proposed based on the carrier storage IGBT(CSTBT)and blocking junction IGBT.The self-biased hole extraction path is formed by a low-doped P-type(HP)region between two trench gates.In the on-state,the HP region is depleted by trench gates and the hole path is pinched off,resulting in high injection efficiency and low VON.In the off-state,the P drift region is shorted to the emitter through the HP region.Consequently,the holes stored in the P drift region can be rapidly transmitted to the emitter through the HP region and the EOFF is reduced.Simulation results show that the blocking voltage of APBJ-IGBT is increased by 17.3％compared with that of the traditional CSTBT.Under the conditions of 1.063 V in VON and 100 A/cm2 in collector current,the EOFF of the APBJ-IGBT is 72.3％lower than that of CSTBT,66.5％lower than that of the conventional blocking junction IGBT,and 25.3％lower than that of the CSTBT with HP.Moreover,the trade-off relationship of VON-EOFF of the APBJ-IGBT is improved greatly.关键词
IGBT/阻断电压/关断损耗/电场/空穴抽取Key words
IGBT/breakdown voltage/turn-off loss/electric field/hole extraction分类
电子信息工程引用本文复制引用
曾荣周,雷盛长,吴振珲,廖淋圆,李俊宏..具有自偏置MOS空穴抽取通路和阻塞结的IGBT[J].电子元件与材料,2025,44(3):259-264,6.基金项目
湖南省自然科学基金(2023JJ40265) （2023JJ40265）
