电子元件与材料2025，Vol.44Issue(3)：292-300,9.DOI:10.14106/j.cnki.1001-2028.2025.1541
基于电荷的GFET等效噪声电路建模
Charge-based modelling of GFET equivalent noise circuits
摘要
Abstract
In order to solve the problem of poor fitting of traditional noise models caused by the inhomogeneity of intrinsic channels due to the impurities and defects in GFET devices,a charge-based equivalent noise circuit model of Graphene Field Effect Transistors(GFET)was proposed.Firstly,considering the influence of the non-reciprocity of GFET,the charge transport characteristics of the intrinsic channel of the device under relevant bias conditions were simulated by introducing a charge-controlled source into the small-signal equivalent circuit,and the small-signal model parameters were extracted from the S-parameters to establish a charge-based small-signal equivalent circuit model.Then,high-frequency noise characteristics of GFET were analyzed,the PRC model method was used to characterize them,and the noise model parameters were obtained by the noise de-embedding technology,and the charge-based GFET equivalent noise circuit model was further established.Finally,the RF performance of the model was evaluated in the frequency range of 1-50 GHz,and the maximum error of the S parameter was only 2.2％,and the average error of the minimum noise figure was 1.2％,and the RF indices such as cut-off frequency and noise parameters were compared with the experimental data to verify the effectiveness and practicability of the proposed model.关键词
石墨烯场效应晶体管/小信号模型/电荷/噪声模型/S参数/噪声参数Key words
graphene field effect transistors/small signal model/charge/noise model/S parameter/noise parameter分类
电子信息工程引用本文复制引用
张家浩,韩宾,武志翔..基于电荷的GFET等效噪声电路建模[J].电子元件与材料,2025,44(3):292-300,9.基金项目
国家自然科学基金青年科学基金(62301463) （62301463）
