摘要
Abstract
Nano silver possesses outstanding properties such as excellent interfacial conductivity,high surface area,superior transparency,and efficient thermal conductivity.These characteristics make it highly beneficial for the performance enhancement of the next-generation microelectronic packaging,particularly in wire bonding and electrical contacts.In this paper,the structural and functional advantages of nano silver are explored,the advancements in synthesis technologies and their compatibility with various application scenarios are systematically reviewed.The mechanisms of particle size control in both physical and chemical synthesis methods and the adaptability to different processes are elaborated.Additionally,recent developments in nanosilver-based pastes,wires,and films are summarized,particularly in high-power devices,sensors,and flexible electronics.The key failure mechanisms,including resistance anomalies caused by electrochemical migration,damage induced by thermal cycling,and dielectric breakdown driven by electrostatic accumulation,are analyzed.And the corresponding mitigation strategies are proposed to address these challenges.Finally,the future of the nano silver in revolutionizing microelectronic packaging technologies is prospected.关键词
纳米银/微电子封装/综述/芯片互连/微电子键合Key words
nanosilver/microelectronics packaging/overview/chip interconnection/microelectronic bonding分类
信息技术与安全科学
