电子与封装2025，Vol.25Issue(6)：100-105,6.DOI:10.16257/j.cnki.1681-1070.2025.0072
基于0.18 μm BCD工艺的抗辐射ESD防护器件GGNMOS优化设计
Optimized Design of Radiation-Hardened ESD Protection Device GGNMOS Based on 0.18 μm BCD Process
陆素先 1程淩 1朱琪 1李现坤 1李娟 1严正君1
作者信息
- 1. 中国电子科技集团公司第五十八研究所,江苏无锡 214035
- 折叠
摘要
Abstract
Gate grounded N-type metal-oxide semiconductor(GGNMOS)devices have the advantages of simple structure,fast response,and efficient discharge,and have gradually become the most commonly used devices in electrostatic discharge(ESD)protection structures.However,during irradiation testing,NMOS devices are affected by various radiation effects,leading to a decrease in device performance and reliability.Therefore,the design of protective structures for GGNMOS devices in radiation-hardened circuits is particularly difficult.A linear regulator circuit with radiation resistance requirements was designed based on 0.18 μm BCD technology.The ESD protection structure for the entire chip of the circuit was designed based on the voltage and operating characteristics of each port.Through experimental analysis,the weak points of the GGNMOS protection structure were identified and improvement solutions were proposed.The actual test results show that the designed circuit not only meets the total dose index of 100 krad(Si),but also passes the 2.5 kV human body model ESD test.This study provides experimental basis and theoretical guidance for the design of ESD devices in future radiation-hardened circuits.关键词
ESD防护/栅接地NMOS/抗辐射/寄生三极管Key words
ESD protection/gate grounded NMOS/radiation-hardened/parasitic transistor分类
电子信息工程引用本文复制引用
陆素先,程淩,朱琪,李现坤,李娟,严正君..基于0.18 μm BCD工艺的抗辐射ESD防护器件GGNMOS优化设计[J].电子与封装,2025,25(6):100-105,6.
